Intern-Device Engineering's Full Profile
Company: RF Micro Devices
Internship Description: 3-6 month device development engineering internship within the technology development group.Intern will characterize physical process bias for high-performance pHEMT FET and HBT devices on GaAs and GaN technologies.Intern will write CDSEM measurement jobs, modify routes to enable data collection, analyze CDSEM data, and generate reports. Through this experience the candidate will be exposed to...
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